Electron energy loss measurements on the gold-silicon interface

نویسندگان

  • F. Salvan
  • A. Cros
  • J. Derrien
چکیده

2014 Gold films deposited at room temperatures on Si are analysed by Auger and electron energy loss spectroscopies which reveal the existence of : 1) a diffuse interface ; 2) a pure gold film; 3) a mixed gold-silicon layer on top of the film. Loss spectra display gold d band features related to electronic properties of gold-silicon alloys. An estimation of the composition in the monolayer range gives nearly the eutectic Au0.81Si0.19. Annealing effects are also investigated. J. Physique LETTRES 41 (1980) L-337 L-340 15 JUILLET 1980,

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تاریخ انتشار 2016